low noise amplifiers - chip 1 1 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas hemt low noise amplifier, 71 - 86 ghz v01.1207 general description features functional diagram noise figure: <5 db p1db: +7 dbm gain: 14 db supply voltage: +2.4v 50 ohm matched input/output die size: 3.10 x 1.60 x 0.1 mm electrical speci cations [1] , t a = +25 c vdd1=vdd2 = 2.1v, vdd3=2.4v, idd1+idd2+idd3 = 30 ma [2] typical applications this hmc-alh459 is ideal for: ? short haul / high capacity links ? wireless lans ? automotive radar ? military & space ? e-band communication systems the hmc-alh459 is a three stage gaas hemt mmic low noise ampli er (lna) which operates between 71 and 86 ghz. the hmc-alh459 features 14 db of small signal gain, 4.5 db of noise gure and an output power of +7 dbm at 1db compression from two supply voltages at 2.1v and 2.4v respectively. all bond pads and the die backside are ti/au metallized and the ampli er device is fully pass- ivated for reliable operation. this versatile lna is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. hmc-alh459 parameter min. typ. max. units frequency range 71 - 86 ghz gain 13 14 db noise figure 4.5 db input return loss 8db output return loss 10 db output power for 1 db compression (p1db) 7 dbm supply current (idd1+idd2+idd3) 30 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg1=vgg2 between -1v to +0.3v (typ -0.5v )to achieve idd total = 30 ma
low noise amplifiers - chip 1 1 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-alh459 v01.1207 gaas hemt low noise amplifier, 71 - 86 ghz linear gain vs. frequency noise figure vs. frequency input return loss vs. frequency output return loss vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 70 72 74 76 78 80 82 84 86 88 90 return loss (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 70 72 74 76 78 80 82 84 86 88 90 return loss (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 74 76 78 80 82 84 86 88 90 noise figure (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 70 72 74 76 78 80 82 84 86 88 90 gain (db) frequency (ghz)
low noise amplifiers - chip 1 1 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings drain bias voltage +3 vdc gate bias voltage -1 to +0.3 vdc rf input power -5 dbm thermal resistance (channel to die bottom) 195.6 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions hmc-alh459 v01.1207 gaas hemt low noise amplifier, 71 - 86 ghz outline drawing notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 die packaging information [1] standard alternate wp - 19 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
low noise amplifiers - chip 1 1 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-alh459 v01.1207 gaas hemt low noise amplifier, 71 - 86 ghz pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2 - 4 vdd1, vdd2, vdd3 power supply voltage for the ampli er. see assembly for required external components. 5rfout this pad is ac coupled and matched to 50 ohms. 6 - 8 vgg1, vgg2, vgg3 gate control for ampli er. please follow mmic ampli er bias- ing procedure application note. see assembly for required external components. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions
low noise amplifiers - chip 1 1 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram hmc-alh459 v01.1207 gaas hemt low noise amplifier, 71 - 86 ghz
low noise amplifiers - chip 1 1 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd pro- tective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). hmc-alh459 v01.1207 gaas hemt low noise amplifier, 71 - 86 ghz
|
